Photoluminescence Properties of GaInAs/InP Layers by Ar Fast Atom Beam for Room Temperature Surface Activated Bonding Toward Hybrid PIC

投稿日 : 2018年3月1日カテゴリー : タグ : 投稿者 : titech-amamiya-lab

Y. Wang, K. Nagasaka, J. Suzuki, L. Bai, T. Mitarai, T. Amemiya, N. Nishiyama, S. Arai, Compound Semiconductor Week 2018: 30th International Conference on Indium Phosphide and Related Materials (IPRM 2018), Fr15PP-Opt.12, May 2018.