Investigation of InP/Si bonding condition for optimizing Photoluminescence property by Surface Activated Bonding based on Fast Atom Beam

投稿日 : 2019年4月15日カテゴリー : タグ : 投稿者 : titech-amamiya-lab

Y. Wang, T. Mitarai, T. Amemiya, N. Nishiyama, S. Arai, Compound Semiconductor Week 2019: 31st International Conference on Indium Phosphide and Related Materials (IPRM 2019), MoP-D-14, May 2019.