Light Propagation Properties of Si Waveguides after Removing III-V Layer on a III-V/SOI Wafer Fabricated by Plasma Activated Bonding

投稿日 : 2014年9月26日カテゴリー : タグ : 投稿者 : titech-amamiya-lab

J. Suzuki, Y. Hayashi, Y. Kuno, J. Kang, T. Amemiya, N. Nishiyama, S. Arai, 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2014), Jul. 2014.