101.
Room-temperature Continuous-wave Operation of GaInAsP/SOI Hybrid Laser Fabricated by N2 Plasma Activated Bonding
研究業績 Publications
2016
102.
Monolithically Integrated 10 Gbit/s Optical Link on Si using Membrane DFB Laser and PIN-Photodiode
103.
An Investigation on the Waveguide Loss Reduction of Membrane Lasers
104.
Double Taper Interlayer Transition Coupler for 3D Optical Interconnection with Heterogeneous Material Stacking
105.
10 Gbit/s Data Transmission through Optical Link by Using Membrane DFB Laser and PIN-PD
106.
Design of a III-V/Si Multi-Section Taper Mode Coupler towards High Efficiency Operation of III-V/Si Active Devices
107.
Lasing Operation of GaInAsP/SOI Hybrid Laser with AlInAs-Oxide Confinement Structure
108.
Effect of the HfO2 passivation on HfS2 Transistors
109.
Vertical Trident Coupler for 3D Optical Interconnection
110.
Impedance Analysis of High-speed Lateral-current-injection Membrane DFB Laser on Silicon
111.
High Asymmetric Light Output Characteristics of Membrane Distributed-Reflector Laser on Si Substrate
112.
Highly Efficient Circular Holes Added a-Si:H Grating Coupler with Metal Mirror for 3D Optical Interconnects
113.
GaInAsP/SOI Hybrid Laser with AlInAs-oxide Confinement StructureFabricated by Plasma Activated Bonding
114.
10 Gbps Operation of Membrane DFB Laser on Silicon with Record High Modulation Efficiency
115.
Waveguide Optical-to-THz Signal Converter using Ring-shaped Microstripline
116.
Metafilm: Metamaterial Array Embedded in Organic Thin Film
2015
117.
Direct Modulation Properties of GaInAsP/InP Membrane DFB Laser on Si
118.
Design of Membrane Type Photodetector with Distributed Bragg Reflector
119.
Trident Type Coupler between Crystal and Amorphous Si Waveguides
120.
Reduction of Driving Voltage of GaInAsP/InP Membrane Fabry-Pérot Lasers
121.
Improvement of Thermal Process Tolerance of Directly Bonded GaInAsP/SOI Wafer by Stressed SiNx Deposition
122.
Lasing Properties of GaInAsP/InP Membrane Distributed-Reflector (DR) Laser
123.
Numerical Analysis of Saturable Absorption Characteristics in III-V/SOI Hybrid Lasers Fabricated by N2 Plasma Activated Bonding
124.
Analysis of Plasmonic Mach-Zehnder Modulator with Metal Taper Structure Embedded in FTC-EO Polymer
125.
Coupling Structures between Crystal/Amorphous Si Waveguides for In-Plane Integration
126.
HfS2 Electric Double Layer Transistor with High Drain Current
127.
High Modulation Efficiency of Sub-milliampere Threshold GaInAsP/InP Membrane DFB Laser
128.
Membrane distributed-reflector laser for on-chip optical interconnects
129.
Design of Feasible Silicon Interlayer Polarization Beam Splitter toward 3D Optical Integrated Circuits
130.
Room-temperature Continuous-wave Operation of λ/4-shifted Membrane Distributed Feedback Lasers
131.
Apodized Amorphous Silicon Grating Coupler with Metal Mirrors for 3D optical Interconnection
132.
Photonic Wire Bonding between Laser and Photodiode Flip-chip Bonded on a Si substrate
133.
Monolithic Integration of Low Threshold-current Membrane DFB Laser and Low Dark-current PIN Photodiode
134.
Semiconductor Membrane Distributed-reflector (DR) Laser
135.
A study of Fabrication Process of III-V/SOI Hybrid Integrated Circuits using Plasma Activated Bonding
136.
Optical Interconnection between III-V chips on Si by using Photonic Wire Bonding
137.
Fabrication of Thin-Film HfS2 FET
138.
Magneto-Optical Integrated Circuits by femtosecond laser modelling in YIG
139.
Integration of Membrane-based DFB Laser and PIN Photodiode on Si Substrate toward On-chip Interconnection
2014
140.
Low-Threshold Current Operation of GaInAsP/InP Lateral-Current-Injection Waveguide Integrated Membrane DFB Laser Bonded on Si Substrate
141.
Optical interconnection between III-V chips on Si by using photonic wire bonding
142.
High Efficiency Inter-Layer Apodized Grating Coupler with Metal Mirrors toward 3D Optical Interconnection
143.
Electrode Position Dependence of Energy Cost in Lateral-Current-Injection Membrane Distributed Reflector Laser
144.
Design of Electrode Position in Lateral-Current-Injection Membrane Laser
145.
Investigation of III-V Layer Removing Process in III-V/SOI Hybrid Devises
146.
GaInAsP/SOI Hybrid Laser with Ring-resonator-type Reflector Fabricated by Plasma Activated Bonding
147.
Light Propagation Properties of Si Waveguides after Removing III-V Layer on a III-V/SOI Wafer Fabricated by Plasma Activated Bonding
148.
Investigation of High Temperature Process for III-V/SOI Hybrid Photonic Devices with AlInAs Oxidation Current Confinement Layer
149.
High Efficiency Apodized Grating Couplers with Metal Mirrors between a-Si:H Multilayer Waveguides toward 3D Optical Interconnection
150.
GaInAsP/InP Lateral-Current-Injection Membrane DFB Laser Integrated with GaInAsP Waveguides on Si Substrate
151.
Asymmetric Invisibility Cloaking Theory Based on Effective Electromagnetic Field for Photon
152.
Three-dimensional Nanostructuring in YIG Ferrite with Femtosecond Laser
153.
Investigation of Optical Interconnection using Photonic Wire Bonding
154.
Asymmetric Invisibility Cloaking Theory Based on the Concept of Effective Electromagnetic Fields for Photons
155.
High quality quantum-well intermixing for InP-based membrane photonic integration on Si
156.
Low-threshold-current Operation of Lateral Current Injection Membrane Distributed-feedback Laser Bonded on Si
157.
Low-Power and High-Speed Operation Capabilities of Semiconductor Membrane Lasers – Energy Cost Limited by Joule Heat
2013
158.
Electrically-driven Permeability Control of Photonic Metamaterials in Semiconductor Optical Devices
159.
Analysis of Energy Cost of Membrane Distributed-Reflector Lasers for On-Chip Optical Interconnection
160.
SiO2 Mask Thickness Dependence of Bandgap Wavelength Shift in Quantum Well Intermixing for Photonic Integration
161.
High Efficiency Inter-Layer Amorphous Silicon Grating Couplers with Metal Mirrors for On-Chip 3D Interconnects
162.
Inter-Layer Grating Coupler with Metal Mirrors for 3D Optical Interconnects
163.
Electrically-driven Permeability-controlled Optical Modulator using Mach-Zehnder Interferometer with Metamaterial
164.
Room-temperature Continuous-wave Operation of Lateral Current
165.
Butt-Joint Built-in (BJB) Structure for Membrane Photonic Integration
166.
Bandgap Wavelength Shift in Quantum Well Intermixing using Different SiO2 masks for Photonic Integration
167.
Permeability-controlled Optical Modulator with Tri-gate Metamaterial
2012
168.
Low Threshold Operation of Lateral Current Injection Type Membrane Laser
169.
High Efficient Layer-to-Layer Si Grating Coupler Sandwiched by Metal Reflectors for Intra-Chip Interconnection
170.
Thermal Analysis of Self-heating Effect in LCI Membrane DFB Laser on Si Substrate
171.
Metamaterial photonic devices toward nano-photonics
172.
Room-Temperature Continuous-Wave Operation of a 1.3-μm npn-AlGaInAs/InP Transistor Laser
173.
Modulation Bandwidth of GaInAsP/InP Lateral-Current-Injection Membrane Laser
174.
Permeability-controlled Optical Devices on an InP-based Photonics Platform
175.
Thermal Analysis of Self-Heating Effect in GaInAsP/InP Membrane DFB Laser on Si Substrate
176.
Low-Threshold Operation of LCI-Membrane-DFB Lasers with Be-doped GaInAs Contact Layer
177.
Compact InP-based 1×2 MMI Splitter on Si Substrate with BCB Wafer Bonding for Membrane Photonic Circuits
178.
10 Gb/s Operation of GaInAs/InP Top Air-Clad. Lateral Junction Waveguide-type Photodiode
179.
Amorphous Silicon Grating-Type Layer-to-Layer Couplers for Intra-Chip Connection
180.
Improved Quantum Efficiency of GaInAsP/InP Top Air-Clad Lateral Current Injection Lasers
2011
181.
GaInAsP/InP Lateral-Current-Injection Membrane DFB Laser with Surface Grating Structure
182.
Lateral Current Injection Laser with Uniformly Distributed Quantum-Well Structure
183.
Carrier Concentration Dependent Resonance Frequency Shift in Metamaterial Loaded Semiconductor
184.
Non-unity Permeability in InP-based Mach-Zehnder Interferometer with Metamaterial
185.
Semiconductor DFB Laser with Plasmonic Metal Layers for Subwavelength Confinement of Light
186.
Lasing Operation of Lateral-Current-Injection Membrane DFB Laser with Surface Grating
187.
Stripe Width Dependence of Internal Quantum Efficiency and Carrier Injection Delay in Lateral Current Injection GaInAsP/InP Lasers
188.
Lateral Current Injection Distributed Feedback Laser with Wirelike Active Regions
189.
Low-power Consumption and High-eye-margin 10 Gbit/s Operation of Distributed Reflector Laser with Wirelike Active Regions
2010
190.
Metamaterial-based Control of Permeability in GaInAsP/InP Multimode-Interferometers
191.
Magnetic Interaction at Optical Frequencies in InP-based Waveguide Device Combined with Metamaterial
192.
Lateral Junction Waveguide Type Photodiode for Membrane Photonic Circuits
193.
All-optical Switch Consisting of Multimode Interferometer Combined with Metamaterials: Device Design
194.
TM-Mode Waveguide Isolator Monolithically Integrated with InP Active Devices
2009
195.
Left-handed Light Controlling Device for Optical Frequency
196.
Simple and compact InP polarization converter for polarization-multiplexed photonic integrated circuits
2008
197.
Phase modulator with InGaAs/InAlAs FACQW grown by MOVPE
198.
1.54-μm-band, TM-mode waveguide optical isolator that uses nonreciprocal loss induced by ferromagnetic MnSb
199.
Nonreciprocal polarization converter consisting of asymmetric waveguide with ferrimagnetic Ce:YIG
200.
Semiconductor waveguide optical isolators incorporating ferromagnetic epitaxial MnX (x=As, Sb)